Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

被引：11
|
作者：
Chen, W. [1 ]
Fang, R. [1 ]
Barnaby, H. J. [1 ]
Balaban, M. B. [1 ]
Gonzalez-Velo, Y. [1 ]
Taggart, J. L. [1 ]
Mahmud, A. [1 ]
Holbert, K. [1 ]
Edwards, A. H. [2 ]
Kozicki, M. N. [1 ]
机构：
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
[2] Air Force Res Lab, Space Vehicles Directorate, Kirtland AFB, NM 87117 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 01期
关键词：
Chalcogenide glasses; gamma-ray radiation; non-volatile switching; programmable metallization cell (PMC); selector device; SiO2; total ionizing dose (TID); volatile switching; RADIATION; DIFFUSION; CRYSTALLIZATION; SYNAPSE; DEVICE;
D O I：
10.1109/TNS.2016.2618359
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70 memory devices degrade after gamma-ray exposure while they are well preserved in SiO2 selector devices.
引用
收藏
页码：269 / 276
页数：8
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