Magnetoresistance in Sn-Doped In2O3 Nanowires

被引：15
|
作者：
Berengue, Olivia M. [1 ]
Lanfredi, Alexandre J. C. [2 ]
Pozzi, Livia P. [1 ]
Rey, Jose F. Q. [2 ]
Leite, Edson R. [3 ]
Chiquito, Adenilson J. [1 ]
机构：
[1] Univ Fed Sao Carlos, Dept Fis, BR-13565905 Sao Paulo, Brazil
[2] Univ Fed ABC, Ctr Engn Modelagem & Cienicas Sociais Aplicadas, BR-09210170 Sao Paulo, Brazil
[3] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Paulo, Brazil
来源：
NANOSCALE RESEARCH LETTERS | 2009年 / 4卷 / 08期
基金：
巴西圣保罗研究基金会;
关键词：
Oxide nanowires; Weak localization; Electron transport; Electron-electron scattering;
D O I：
10.1007/s11671-009-9336-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, we present transport measurements of individual Sn-doped In2O3 nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.
引用
收藏
页码：921 / 925
页数：5
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