Influence of the Sn oxidation state in ferromagnetic Sn-doped In2O3 nanowires

被引：6
|
作者：
Maloney, Francis Scott [1 ]
Wang, Wenyong [1 ]
机构：
[1] Univ Wyoming, Dept Phys & Astron, POB 3905, Laramie, WY 82071 USA
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 24期
关键词：
ROOM-TEMPERATURE FERROMAGNETISM; ELECTRICAL-PROPERTIES; OXIDE; SEMICONDUCTORS; DIFFRACTION; MAGNETISM; OXYGEN;
D O I：
10.1063/1.4972037
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Sn-doped indium oxide nanowires were grown using a vapor-liquid-solid technique (VLS). The Sn content of the nanowires was tunable based on the source powder ratios used in the VLS process. The oxidation state of the Sn ions was examined using x-ray photoelectron spectroscopy. It was found that Sn2+ was the dominant ionic species in samples over 6% (atomic percentage) Sn. The nanowires were found to be ferromagnetic at room temperature, and their saturation magnetization increased with increasing Sn concentration, which could be associated with the spin-splitting of a defect band that was encouraged by the imbalance of Sn2+ to Sn4+ species at high Sn concentrations. Published by AIP Publishing.
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页数：5
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