Extraction of Accurate GaN HEMT Model for High-Efficiency Power Amplifier Design

被引：0

作者：

Vadalal, Valeria ^{[1
]}

Raffo, Antonio ^{[1
]}

Avolio, Gustavo ^{[2
]}

Marchetti, Mauro ^{[3
]}

Schreurs, Dominique M. M. -P ^{[2
]}

Vannini, Giorgio ^{[1
]}

机构：

[1] Univ Ferrara, Dept Engn, I-44122 Ferrara, Italy

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

[3] Anteverta Mw BV, NL-2601 DB Delft, Netherlands

来源：

2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2015年

关键词：

microwave FET; nonlinear transistor model; nonlinear microwave measurements; power amplifiers;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper the nonlinear model of a GaN transistor is extracted starting from dynamic bias measurements under class-F operation. Thanks to this technique, applied for the first time to high-efficiency classes of operation, one can get at once and separately the nonlinear currents and charges of the transistor in actual operating conditions. As case study a 0.25-mu m GaN HEMT is considered. The model has been fully validated through comparison with harmonic loadpull measurements carried out at 5 GHz.

引用

页数：4

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