A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT

被引：0
|
作者：
Vandendaele, W. [1 ]
Garros, X. [1 ]
Lorin, T. [1 ]
Morvan, E. [1 ]
Tones, A. [1 ]
Escoffier, R. [1 ]
机构：
[1] Grenoble Alpes Univ, CEA Leti, 17 Ave Martyrs, F-38054 Grenoble, France
来源：
2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2018年
关键词：
pBTI; GaN on Si; E-mode GaN; AC pBTI; ultrafast pBTI;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the first time, ultrafast AC pBTI measurements are applied to GaN on Si E-mode MOSc-HEMT and compared to DC pBTI. Full recess Al2O3/GaN MOS gate is submitted to AC signals with various frequencies, duty factors and stress times. The degradation and relaxation characteristics are then modeled through a RC model combined to a CET map and fitted to experimental data. This map reveals the presence of two trap populations, also observed through Delta Vth degradation kinetics. Acceleration factors (gate voltage and temperature) are estimated as well as TTF (Time to Failure) under AC conditions and show an extended lifetime compared to DC stress conditions. Finally dynamic variability is studied and indicates that our devices are ruled by normal distributions.
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页数：6
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