Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

被引：17

作者：

Le Royer, C. ^{[1
,2
]}

Mohamad, B. ^{[1
,2
]}

Biscarrat, J. ^{[1
,2
]}

Vauche, L. ^{[1
,2
]}

Escoffier, R. ^{[1
,2
]}

Buckley, J. ^{[1
,2
]}

Becu, S. ^{[1
,2
]}

Riat, R. ^{[1
,2
]}

Gillot, C. ^{[1
,2
]}

Charles, M. ^{[1
,2
]}

Ruel, S. ^{[1
,2
]}

Pimenta-Barros, P. ^{[1
,2
]}

Posseme, N. ^{[1
,2
]}

Besson, P. ^{[1
,2
]}

Boudaa, F. ^{[1
,2
]}

Vannuffel, C. ^{[1
,2
]}

Vandendaele, W. ^{[1
,2
]}

Viey, A. G. ^{[1
,2
]}

Krakovinsky, A. ^{[1
,2
]}

Jaud, M. -A. ^{[1
,2
]}

Modica, R. ^{[3
]}

Iucolano, F. ^{[3
]}

Le Tiec, R. ^{[4
]}

Levi, S. ^{[4
]}

Orsatelli, M. ^{[5
]}

Gwoziecki, R. ^{[1
,2
]}

Sousa, V. ^{[1
,2
]}

机构：

[1] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

[2] Univ Grenoble Alpes, F-38000 Grenoble, France

[3] STMicroelectronics, Stradale Primosole 50, I-95121 Catania, Italy

[4] PDC Bsiness Grp, Appl Mat, IL-76705 Rehovot, Israel

[5] CEA Tech Occitanie, F-31670 Labege, France

来源：

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2022年

关键词：

Power; GaN-on-Si; AlGaN/GaN; MOSc HEMT; fully recessed gate architecture; 200mm Si substrates; ON state resistance; 650V application; packaged devices;

D O I：

10.1109/ISPSD49238.2022.9813672

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper we present a detailed performance status of AlGaN/GaN MOS channel High Electron Mobility Transistors (MOSc HEMTs) with fully recessed gate architecture on 200mm Si substrates. We report a wide range of wafer and package level results. ON state resistance is studied through three aspects: i) RON partitioning with analysis of its four components, ii) RON temperature dependence, iii) cumulative dynamic RON under stress. For accurate power assessment we characterize packaged devices and compare the typical figures of merit (gate charge, switching tests) to state of the art references (especially pGaN gate HEMTs). We highlight the benefits offered by this technology for 650V applications, such as very low I-GSS leakage even at 150 degrees C, and better switching performances, t(d(on)), t(d(off)).

引用

页码：49 / 52

页数：4

共 50 条

[1] Influence of gate length on pBTI in GaN-on-Si E-mode MOSc-HEMT
Viey, A. G.
Vandendaele, W.
Jaud, M. A.
Gwoziecki, R.
Torres, A.
Plissonnier, M.
Gaillard, F.
Ghibaudo, G.
Modica, R.
Iucolano, F.
Meneghini, M.
Meneghesso, G.
2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2019,
[2] Normally-off AlGaN/AlN/GaN HEMT with a composite recessed gate
Li, Jialin
Yin, Yian
Zeng, Ni
Liao, Fengbo
Lian, Mengxiao
Zhang, Xichen
Zhang, Keming
Li, Jingbo
SUPERLATTICES AND MICROSTRUCTURES, 2022, 161
[3] Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs
Keum, Dongmin
Kim, Hyungtak
CRYOGENICS, 2018, 93 : 51 - 55
[4] Gate-recessed normally-off GaN-on-Si HEMT using a new O2-BCl3 digital etching technique
Burnham, Shawn D.
Boutros, Karim
Hashimoto, Paul
Butler, Colleen
Wong, Danny W. S.
Hu, Ming
Micovic, Miroslav
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
[5] Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure
Pradhan, Mamta
Moser, Matthias
Alomari, Mohammed
Burghartz, Joachim. N.
Kallfass, Ingmar
ESSDERC 2022 - IEEE 52ND EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2022, : 400 - 403
[6] Proton Bombardment Effects on Normally-off AlGaN/GaN-on-Si Recessed MISHeterostructure FETs
Keum, Dong Min
Cha, Ho-Young
Kim, Hyungtak
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (06) : 3362 - 3368
[7] Investigation Of The Conversion Of GaN Channel Into Crystalline GaON In Fully Recessed Double Gate HEMT Toward Normally-Off Operation
Ahmed, Md Ibrahim
Razo, Md Saddam Hossain
2021 IEEE INTERNATIONAL WOMEN IN ENGINEERING (WIE) CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (WIECON-ECE), 2022, : 137 - 140
[8] Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric
Kim, Hyun-Seop
Han, Sang-Woo
Jang, Won-Ho
Cho, Chun-Hyung
Seo, Kwang-Seok
Oh, Jungwoo
Cha, Ho-Young
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (08) : 1090 - 1093
[9] Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-Gate
Egorkin V.I.
Zemlyakov V.E.
Kapaev V.V.
Kukhtyaeva O.B.
Kapaev, V.V. (kapaevvv@lebedev.ru), 1600, Pleiades journals (49): : 445 - 451
[10] Monolithic Integrated Quasi-Normally-Off Gate Driver and 600 V GaN-on-Si HEMT
Moench, S.
Costa, M.
Barner, A.
Kallfass, I.
Reiner, R.
Weiss, B.
Waltereit, P.
Quay, R.
Ambacher, O.
WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS, 2015, : 92 - 97

← 1 2 3 4 5 →