Some physical properties of ZnO thin films prepared by RF sputtering technique

被引：72

作者：

Ekem, N. ^{[1
]}

Korkmaz, S. ^{[1
]}

Pat, S. ^{[1
]}

Balbag, M. Z. ^{[2
]}

Cetin, E. N. ^{[1
]}

Ozmumcu, M. ^{[1
]}

机构：

[1] Eskisehir Osmangazi Univ, Dept Phys, TR-26480 Meselik, Eskisehir, Turkey

[2] Eskisehir Osmangazi Univ, Fac Educ, TR-26480 Meselik, Eskisehir, Turkey

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2009年 / 34卷 / 12期

关键词：

ZnO; RF sputter; Thin film; Optical properties; SPRAY-PYROLYSIS;

D O I：

10.1016/j.ijhydene.2009.02.001

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO thin films were deposited with RF sputtering using pure Zn target. In order to generate oxidation process of Zn, Ar:O-2 gas mixing in (9:1), (7:3) and (5:5) ratios of Ar:O-2 was used. To characterize ZnO thin films thickness and transparency were measured using optical method, and refractive index and band gap energies were calculated. Electrical conductivity of the ZnO thin films was also determined. AFM images were used to determine surface morphology of produced ZnO thin films. (c) 2009 International Association for Hydrogen Energy. Published by Elsevier Ltd. All rights reserved.

引用

页码：5218 / 5222

页数：5

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