245 GHz SiGe Transmitter with Integrated Antenna and External PLL

被引：0

作者：

Schmalz, Klaus ^{[1
]}

Wang, Ruoyu ^{[1
]}

Borngraeber, Johannes ^{[1
]}

Debski, Wojciech ^{[2
]}

Winkler, Wolfgang ^{[2
]}

Meliani, Chafik ^{[1
]}

机构：

[1] IHP, D-15236 Frankfurt, Oder, Germany

[2] Silicon Radar GmbH, D-15236 Frankfurt, Oder, Germany

来源：

2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年

关键词：

SiGe; mm-wave; 245; GHz; VCO; power amplifier; frequency doubler; transmitter; integrated antenna;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 245 GHz transmitter (TX) with an integrated antenna for sensing applications has been realized, which consists of a push-push VCO with a 1/64 frequency divider, a transformer- coupled one-stage power amplifier, a frequency doubler, and an on-chip antenna with localized backside etching. The frequency of the TX is tunable by an external PLL in the range from 239.5 GHz to 250.8 GHz. The TX is fabricated in 0.13 um SiGe:C BiCMOS technology with f(T)/F-max of 300GHz/500GHz. The output power of the TX is 1 dBm at 245 GHz. The TX including the frequency divider dissipates 0.38 W. The EIRP of the transmitter with antenna was measured using an external receive horn antenna. The EIRP reaches about 7 dBm at 245 GHz. This value represents the highest EIRP reported for a 245 GHz transmitter with integrated single antenna so far.

引用

页数：3

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