Proximity Effect in Graphene-Topological-Insulator Heterostructures

被引：104
|
作者：
Zhang, Junhua [1 ]
Triola, C. [1 ]
Rossi, E. [1 ]
机构：
[1] Coll William & Mary, Dept Phys, Williamsburg, VA 23187 USA
来源：
PHYSICAL REVIEW LETTERS | 2014年 / 112卷 / 09期
关键词：
DOUBLE-LAYER GRAPHENE; HEXAGONAL BORON-NITRIDE; DIRAC FERMIONS; COULOMB DRAG; SUPERLATTICES; BI2SE3; TRANSPORT; SURFACE;
D O I：
10.1103/PhysRevLett.112.096802
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We formulate a continuum model to study the low-energy electronic structure of heterostructures formed by graphene on a strong three-dimensional topological insulator (TI) for the cases of both commensurate and incommensurate stacking. The incommensurability can be due to a twist angle between graphene and the TI surface or a lattice mismatch between the two systems. We find that the proximity of the TI induces in graphene a strong enhancement of the spin-orbit coupling that can be tuned via the twist angle.
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页数：5
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