Quality and Growth Rate of Hot-Wire Chemical Vapor Deposition Epitaxial Si Layers

被引：0

作者：

Teplin, Charles W. ^{[1
]}

Martin, Ina T. ^{[1
]}

Jones, Kim M. ^{[1
]}

Young, David ^{[1
]}

Romero, Manuel J. ^{[1
]}

Reedy, Robert C. ^{[1
]}

Branz, Howard M. ^{[1
]}

Stradins, Paul ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, NCPV, Golden, CO 80401 USA

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008 | 2008年 / 1066卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Fast epitaxial growth of several microns thick Si at glass-compatible temperatures by the hot-wire CVD technique is investigated, for film Si photovoltaic and other applications. Growth temperature determines the growth phase (epitaxial or disordered) and affects the growth rate, possibly due to the different hydrogen coverage. Stable epitaxy proceeds robustly in several different growth chemistry regimes at substrate temperatures above 600 degrees C. The resulting films exhibit low defect concentrations and high carrier mobilities.

引用

页码：285 / 289

页数：5

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