Optimization and Fabrication of High Power 1060 nm Single-mode DFB Lasers

被引:0
|
作者
Wang, Hao [1 ]
Zhai, Teng [1 ]
Tan, Shaoyang [1 ]
Zhang, Ruikang [1 ]
Zhao, Lingjuan [1 ]
Wang, Wei [1 ]
Lu, Dan [1 ]
Ji, Chen [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
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暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report 1060-nm high power DFB lasers with single mode operation up to 300-mW in 2-mm cavity design, by systematically optimizing epitaxial design for low internal loss and a double-trench waveguide for lateral mode stability.
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页数:3
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