Generic Electrostatic Discharges Protection Solutions for RF and Millimeter-Wave Applications

被引:8
|
作者
Lim, Tekfouy [1 ,2 ]
Benech, Philippe [2 ]
Jimenez, Jean [1 ]
Fournier, Jean-Michel [2 ]
Heitz, Boris [1 ]
Bourgeat, Johan [1 ]
Galy, Philippe [1 ]
机构
[1] STMicroelect Crolles, F-38016 Crolles, France
[2] IMEP LAHC Lab, F-38016 Grenoble, France
关键词
Advanced CMOS technologies; electrostatic discharges (ESDs); millimeter-wave (mm-wave); RF; transmission lines; TRANSMISSION-LINE; ESD; DESIGN; CAPACITANCE; ROBUSTNESS; AMPLIFIER; CIRCUITS;
D O I
10.1109/TMTT.2015.2478000
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The vertical shrinkage of the advanced CMOS processes thicknesses makes electrostatic discharge (ESD) issues become more significant. RF and millimeter-wave (mm-wave) circuits are very sensitive to the ESD components' capacitive parasitic effect. Surface area is a key factor as well in an ESD protection circuit for mm-wave applications. This paper presents silicon-verified ESD solutions, which fulfill physical dimensions, ESD robustness, and broadband frequencies requirements.
引用
收藏
页码:3747 / 3759
页数:13
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