Analysis of the profile curves of the menisci for the sapphire tubes growth by EFG (Stepanov) technique

被引：11
|
作者：
Rossolenko, S. N. [1 ]
Kurlov, V. N. [1 ]
Asrian, A. A. [1 ]
机构：
[1] RAS, Inst Solid State Phys, Chernogolovka 142432, Russia
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2009年 / 44卷 / 07期
关键词：
EFG; meniscus; profile curve; sapphire; FILM-FED GROWTH; CRYSTAL-GROWTH; SILICON SHEETS; LIQUID MENISCI; CZOCHRALSKI; DYNAMICS; LIMITS;
D O I：
10.1002/crat.200900067
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
This paper deals with investigation of the behavior of the profile curves of the melt menisci for the case of the sapphire crystal growth by EFG (Stepanov) technique. The cases of external and internal circular menisci of the crystal tube are considered. The cases of the positive and negative angles of the contact of the profile curve with the working surface of the shaper are considered. Features of the profile curves are used in the automated control systems of the crystal growth using of the weight sensor. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：689 / 700
页数：12
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