Scanning capacitance microscopy of TGS - TGS plus Cr ferroelectric crystals

被引：3
|
作者：
Gainutdinov, R. V. [1 ]
Belugina, N. V. [1 ]
Lashkova, A. K. [1 ]
Shut, V. N. [2 ]
Kashevich, I. F. [3 ]
Mozzharov, S. E. [2 ]
Tolstikhina, A. L. [1 ]
机构：
[1] Russian Acad Sci, Fed Sci Res Ctr Crystallog & Photon, Shubnikov Inst Crystallog, Moscow, Russia
[2] Natl Acad Sci Belarus, Inst Tech Acoust, Vitebsk, BELARUS
[3] Vitebsk State Univ, Dept Math & IT, Vitebsk, BELARUS
来源：
FERROELECTRICS | 2019年 / 541卷 / 01期
关键词：
TGS; scanning capacitance microscopy; compositional mapping; domain structure; TRIGLYCINE SULFATE CRYSTALS; FORCE MICROSCOPY; RESOLUTION;
D O I：
10.1080/00150193.2019.1574640
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The question of the applicability of the scanning capacitive microscopy method for the composite mapping of ferroelectric crystals with the growth periodic structure TGS - TGS + Cr is considered. Contrast images of nominally pure stripes and impurity ones with concentration of Cr+3 similar to 0.08 wt% were obtained. Volt-ampere characteristics were measured, which revealed current increase in the impurity stripes in 1.5-3 times. It was shown that capacitive contrast was formed in the stripes with a gradient of impurity concentration and at the domain boundaries.
引用
收藏
页码：39 / 46
页数：8
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