Quantitative determination of compositional profiles using HAADF image simulations

被引：1

作者：

El Bouayadi, R. ^{[2
]}

Korytov, M. ^{[3
]}

van Aken, P. A. ^{[4
]}

Vennegues, P. ^{[5
]}

Benaissa, M. ^{[1
]}

机构：

[1] CNRST, Angle Allal Fassi FAR, Rabat 10102, Morocco

[2] Univ Mohammed Premier, LPMR, Oujda 60000, Morocco

[3] Leibniz Inst Kristallzuchtung, D-12489 Berlin, Germany

[4] Max Planck Inst Intelligent Syst, D-70569 Stuttgart, Germany

[5] CNRS, CRHEA, F-06560 Valbonne, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2 | 2014年 / 11卷 / 02期

关键词：

HAADF simulation; GaN quantum dot; AlGaN barrier; chemical quantification; MULTISLICE METHOD; ELECTRONS; CRYSTALS;

D O I：

10.1002/pssc.201300305

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The purpose of this study is to use high-angle annular-dark-field simulation to quantify aluminum fluctuation across the interface formed by a GaN-quantum dot and an AlGaN barrier layer. For this aim, a basic methodology with theoretical/numerical simulations has been carried out using nanometric, but not atomic, resolution range. A simple multislice method, based on simulations of the HAADF intensity scattered by a GaN/AlGaN interface was performed. Enrichment of aluminum near the GaN/AlGaN interface was confirmed by HAADF simulation. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：284 / 288

页数：5

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