Evanescent Field Maximization of Linear Silicon Nitride Channel Waveguide

被引：0
|
作者：
Khar, K. N. [1 ]
Shahimin, M. M. [1 ]
Adikan, F. R. M. [2 ]
机构：
[1] Univ Malaysia Perlis, Sch Microelect Engn, Tun Abdul Razak Laser Lab TAREL, Pauh 02600, Perlis, Malaysia
[2] Univ Malaya, Fac Engn, Photon Res Grp, Kuala Lumpur 50603, Malaysia
来源：
2013 IEEE 4TH INTERNATIONAL CONFERENCE ON PHOTONICS (ICP) | 2013年
关键词：
component; Integrated Optic; Linear waveguide; Beam propagation method; Evanescent field optimization; FORCES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sensitivity of evanescent field sensor is highly affected by strength of evanescent field with respect to its penetration depth and intensity. However in most cases, evanescent field is not maximized and thus the performance of the sensor is not optimized. It is the aim of the paper to optimize the silicon nitride linear waveguide through simulation by using 3D FD-BPM. The resultant investigation shows that evanescent field is maximized at TM polarization, 0.9 mu m thickness and 4 mu m width waveguide. Besides, result also shows that TM-polarization results in 15.5 times stronger evanescent field at optimized physical dimension compared to TE polarization.
引用
收藏
页码：196 / 198
页数：3
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