Dispersive processes in the annealing of light- and thermally-induced dangling bonds in a-Si:H

被引：0

作者：

Takeda, K

Hikita, H

Kimura, Y

Yokomichi, H

Morigaki, K

机构：

[1] ELECTROCHEM & CANC INST,CHOFU,TOKYO 182,JAPAN

[2] MEIKAI UNIV,PHYS LAB,URAYASU,CHIBA 279,JAPAN

[3] TOKAI UNIV,HIRATSUKA,KANAGAWA 25912,JAPAN

[4] TOYAMA PREFECTURAL UNIV,FAC ENGN,TOYAMA 93903,JAPAN

[5] HIROSHIMA INST TECHNOL,DEPT ELECT ENGN,SAEKI KU,HIROSHIMA 73151,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 200卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The annealing of light- and thermally-induced dangling bonds in a-Si:H exhibits a dispersive kinetics whose time dependence is expressed by a stretched exponential function. The annealing-temperature dependence of the dispersion parameter for both types of dangling bonds is discussed.

引用

页码：486 / 489

页数：4

共 50 条

[21] Hydrogen distribution in the vicinity of dangling bonds in hydrogenated amorphous silicon (a-Si:H)
Fehr, M.
Schnegg, A.
Teutloff, C.
Bittl, R.
Astakhov, O.
Finger, F.
Rech, B.
Lips, K.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (03): : 552 - 555
[22] Weak bond/dangling bond conversion model for light-induced defects in a-Si:H
Santos, P.V.
Jackson, W.B.
Journal of Non-Crystalline Solids, 1991, 137-38 (pt 1) : 203 - 206
[23] THE ROLE OF DANGLING BONDS IN RADIATIVE AND NONRADIATIVE PROCESSES IN A-SI-H
WILSON, BA
SERGENT, AM
HARBISON, JP
AIP CONFERENCE PROCEEDINGS, 1984, (120) : 149 - 156
[24] THE PRESENCE OF DIFFERENT KINDS OF DANGLING BONDS AND THEIR LIGHT-INDUCED CREATION IN A-SI-H
HIKITA, H
TAKEDA, K
KIMURA, Y
YOKOMICHI, H
MORIGAKI, K
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 219 - 222
[25] Photocreated neutral dangling bonds in N-doped and undoped a-Si:H films
Zhang, Q
Takashima, H
Kumeda, M
Shimizu, T
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 200 : 495 - 498
[26] Photocreated neutral dangling bonds in N-doped and undoped a-Si:H films
Zhang, Qing
Takashima, Hideki
Kumeda, Minoru
Shimizu, Tatsuo
1996, Elsevier Science B.V., Amsterdam, Netherlands (198-200)
[27] Kinetics of light-induced metastable defect creation and annealing in a-Si:H
Kodolbaş, Alp Osman
Eray, Aynur
Öktü, Özcan
Turkish Journal of Physics, 2002, 26 (01): : 33 - 39
[28] Study of light-induced annealing effects in a-Si:H thin films
Ho, WY
Surya, C
MICROELECTRONICS RELIABILITY, 2001, 41 (06) : 913 - 917
[29] Light-induced metastable defect formation and annealing kinetics in a-Si:H
Kodolbas, AO
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 95 (01): : 67 - 72
[30] Light-induced processes in a-Si:H films at elevated temperatures
I. A. Kurova
É. V. Larina
N. N. Ormont
D. V. Senashenko
Semiconductors, 1997, 31 : 1257 - 1260

← 1 2 3 4 5 →