Dispersive processes in the annealing of light- and thermally-induced dangling bonds in a-Si:H

被引：0
|
作者：
Takeda, K
Hikita, H
Kimura, Y
Yokomichi, H
Morigaki, K
机构：
[1] ELECTROCHEM & CANC INST,CHOFU,TOKYO 182,JAPAN
[2] MEIKAI UNIV,PHYS LAB,URAYASU,CHIBA 279,JAPAN
[3] TOKAI UNIV,HIRATSUKA,KANAGAWA 25912,JAPAN
[4] TOYAMA PREFECTURAL UNIV,FAC ENGN,TOYAMA 93903,JAPAN
[5] HIROSHIMA INST TECHNOL,DEPT ELECT ENGN,SAEKI KU,HIROSHIMA 73151,JAPAN
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 200卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The annealing of light- and thermally-induced dangling bonds in a-Si:H exhibits a dispersive kinetics whose time dependence is expressed by a stretched exponential function. The annealing-temperature dependence of the dispersion parameter for both types of dangling bonds is discussed.
引用
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页码：486 / 489
页数：4
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