Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3

被引：299

作者：

Zhang, Guanhua ^{[1
]}

Qin, Huajun ^{[1
]}

Teng, Jing ^{[1
]}

Guo, Jiandong ^{[1
]}

Guo, Qinlin ^{[1
]}

Dai, Xi ^{[1
]}

Fang, Zhong ^{[1
]}

Wu, Kehui ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 05期

关键词：

bismuth compounds; low energy electron diffraction; molecular beam epitaxial growth; narrow band gap semiconductors; Raman spectra; scanning tunnelling microscopy; semiconductor epitaxial layers; semiconductor growth; X-ray diffraction; X-ray photoelectron spectra; SINGLE DIRAC CONE; SURFACE; BI2TE3; SB2TE3; GROWTH;

D O I：

10.1063/1.3200237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomically smooth, single crystalline Bi2Se3 thin films were prepared on Si(111) by molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron emission spectroscopy, and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The films grow in a self-organized quintuple layer by quintuple-layer mode, and atomically smooth films can be obtained, with controllable thickness down to one quintuple layer (similar to 1 nm).

引用

页数：3

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