Extremely radiation stable rectifiers and photovoltaic converters based at thin-film heterojunctions of intrinsic semiconductors

被引：0
|
作者：
Volovichev, IN
Gurevich, YG
Koshkin, VM
机构：
来源：
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2 | 1997年
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The nonlinear charge carriers transport had been investigated at the metal-intrinsic semiconductor-metal (M-i-M) and heterojunction of two intrinsic semiconductors (i-i) structures, It is shown that if the film thickness is of order of Debye screening radius, the current-voltage characteristics of the structures mentioned become comparable to those ones, observed for the usual junctions at the base of doped semiconductors.
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页码：323 / 326
页数：4
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