Effect of gas-mixing and substrate temperatures on structural properties of GaN nanorods grown on Si (111) substrates by using hydride vapor-phase epitaxy

被引：3
|
作者：
Lee, K. H. [2 ]
Lee, J. Y. [2 ]
Kwon, Y. H. [3 ]
Ryu, S. Y. [3 ]
Kang, T. W. [3 ]
Yoo, C. H. [1 ]
Lee, D. U. [1 ]
Kim, T. W. [1 ]
机构：
[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[3] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 02期
关键词：
Nanostructures; Hydride vapor phase epitaxy; Nanomaterials; Semiconducting III-V materials; LIGHT-EMITTING-DIODES; OPTICAL-PROPERTIES; NANOWIRES; PHOTOLUMINESCENCE; DEPOSITION;
D O I：
10.1016/j.jcrysgro.2008.11.031
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
X-ray diffraction patterns, scanning electron microscopy images, and transmission electron microscopy (TEM) images showed that one-dimensional GaN nanorods grown on Si (111) substarates by using hydride vapor phase epitaxy had crystalline wurzite structures and were preferentially oriented along the [0 0 0 1] direction. The high-resolution TEM (HRTEM) images showed that the side facet planes of the tip region for the GaN nanorods consisted of {(1) over bar1 0 0}, {(1) over bar1 0 2}, and {(1) over bar 1 0 3} planes. The structural properties of the GaN nanorods were significantly affected by the gas-mixing and the substrate temperatures in the final growth zone. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：244 / 248
页数：5
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