Terahertz electron transport in a two-dimensional topological insulator in a HgTe quantum well

被引：7
|
作者：
Kvon, Z. D. [1 ,2 ]
Dantscher, K. M. [3 ]
Zoth, C. [3 ]
Kozlov, D. A. [1 ,2 ]
Mikhailov, N. N. [1 ,2 ]
Dvoretsky, S. A. [1 ]
Ganichev, S. D. [3 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
[3] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany
来源：
JETP LETTERS | 2014年 / 99卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
STATE;
D O I：
10.1134/S0021364014050130
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The terahertz response of a two-dimensional topological insulator in a HgTe quantum well to radiation with wavelengths of 118 and 184 mu m is investigated. It is found that the photoconductivity is rather high (up to a few percent of dark conductivity) and is manifested in both the local and nonlocal responses of the system. This fact proves that the observed photoconductivity is caused by changes in the transport via edge current-carrying states. The sign and nonresonant character of the photoconductivity indicate that it is caused by the heating of electrons in the system. The analysis of experimental results makes it possible to suggest that this heating originates from the Drude absorption of terahertz radiation by metallic "droplets" appearing owing to fluctuations in the impurity potential and the gap and located in direct proximity to edge states.
引用
收藏
页码：290 / 294
页数：5
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