Scanning-probe-induced defects in thin SiO2 film on Si: Comparison with Si clusters

被引：9

作者：

Miyata, N ^{[1
]}

Ichikawa, M

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Semicond Res Ctr, AIST Tsukuba Cent 4,1-1-1 Higashi, Tsukuba, Ibaraki 3058562, Japan

[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.70.073306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We used scanning tunneling microscopy and spectroscopy to examine Si-clusterlike defects which were created by a scanning-probe-induced process around the intrinsic defects in a thermally grown SiO2 film on Si. We compared these defects with Si clusters deposited on ultrathin Si oxide. Two types of defects were recognized, which have energy gaps at around 3.8 and 2.5 eV. We proposed that these two types of defects correspond to inner and surface damage on SiO2 film.

引用

页码：073306 / 1

页数：4

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