Fabrication of III-V semiconductor core-shell nanowires by SA-MOVPE and their device applications

被引：0
|
作者：
Fukui, T. [1 ]
Tomioka, K.
Hara, S.
Hiruma, K.
Motohisa, J.
机构：
[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, North 13 West 8, Sapporo, Hokkaido 0608628, Japan
来源：
PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010) | 2010年
关键词：
GROWTH;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated various kinds of III-V semiconductor nanowires and core-shell nanowires using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on (111) oriented substrates, such as GaAs, GaAs/AIGaAs, InP, InPllnAsllnP on III-V substrates, and InAs and GaAs on Si. As for device applications, we fabricated GaAs/GaAsP core-shell nanowire photo-excited lasers, and InP core-shell pn junction solar cells. We also demonstrate III-V semiconductor nano-wires grown on Si (111) substrates.
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页码：209 / 210
页数：2
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