Growth and optical properties of nanocrystalline Ga0.81In0.19Sb embedded in silica film

被引：0
|
作者：
Liu, FM [1 ]
Wang, TM
Zhang, LD
机构：
[1] Beijing Univ Aeronaut & Astronaut, Sch Sci, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
来源：
MATERIALS LETTERS | 2002年 / 56卷 / 03期
基金：
中国博士后科学基金;
关键词：
nanocrystalline Ga0.81In0.19Sb; optical properties; quantum confinement effect;
D O I：
10.1016/S0167-577X(02)00432-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanocrystalline Ga0.81In0.19Sb embedded in silica film was grown by radio frequency (RF) magnetron co-sputtering. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) strongly support the existence of nanocrystalline Ga0.81In0.19Sb in the silica film. X-ray photoelectron spectroscopy further shows that the strong affinity of Si with oxygen produces a silicon dioxide layer wrapping the nanoparticles of the Ga0.62In0.38Sb. The room temperature optical transmission spectra show that the absorption edge exhibits a large blue shift of about 3.38 eV compared with that of the bulk semiconductor, suggesting the existence a of quantum confinement effect. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：156 / 160
页数：5
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