Growth and optical properties of nanocrystalline Ga0.81In0.19Sb embedded in silica film

被引：0
|
作者：
Liu, FM [1 ]
Wang, TM
Zhang, LD
机构：
[1] Beijing Univ Aeronaut & Astronaut, Sch Sci, Ctr Mat Phys & Chem, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China
来源：
MATERIALS LETTERS | 2002年 / 56卷 / 03期
基金：
中国博士后科学基金;
关键词：
nanocrystalline Ga0.81In0.19Sb; optical properties; quantum confinement effect;
D O I：
10.1016/S0167-577X(02)00432-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanocrystalline Ga0.81In0.19Sb embedded in silica film was grown by radio frequency (RF) magnetron co-sputtering. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) strongly support the existence of nanocrystalline Ga0.81In0.19Sb in the silica film. X-ray photoelectron spectroscopy further shows that the strong affinity of Si with oxygen produces a silicon dioxide layer wrapping the nanoparticles of the Ga0.62In0.38Sb. The room temperature optical transmission spectra show that the absorption edge exhibits a large blue shift of about 3.38 eV compared with that of the bulk semiconductor, suggesting the existence a of quantum confinement effect. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：156 / 160
页数：5
相关论文
共 50 条
  • [1] OPTICAL-PROPERTIES AND FLUCTUATIONS OF COMPOSITION IN GA0.77IN0.23AS0.19SB0.81 ALLOYS
    TRONC, P
    REID, B
    MACIEJKO, R
    LECLERCQ, JL
    LAZZARI, JL
    SOLID STATE COMMUNICATIONS, 1993, 85 (02) : 177 - 181
  • [2] Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films
    Liu, FM
    Wang, TM
    Zhang, LD
    Li, GH
    Han, HX
    JOURNAL OF LUMINESCENCE, 2002, 99 (03) : 273 - 281
  • [3] Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template
    Zhang Dong-Yan
    Zheng Xin-He
    Li Xue-Fei
    Wu Yuan-Yuan
    Wang Hui
    Wang Jian-Feng
    Yang Hui
    CHINESE PHYSICS B, 2012, 21 (08)
  • [4] Strain relaxation and optical properties of etched In0.19Ga0.81 N nanorod arrays on the GaN template
    张东炎
    郑新和
    李雪飞
    吴渊渊
    王辉
    王建峰
    杨辉
    Chinese Physics B, 2012, (08) : 515 - 520
  • [5] LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTRA OF GA0.77IN0.23AS0.19SB0.81 COMPOUNDS
    TRONC, P
    REID, B
    MANI, H
    MACIEJKO, R
    TITKOV, AN
    LAZZARI, JL
    ALIBERT, C
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1993, 180 (02): : K87 - K91
  • [6] Temperature and stress dependencies of the magnetic and magnetostrictive properties of Fe0.81Ga0.19
    Kellogg, RA
    Flatau, AB
    Clark, AE
    Wun-Fogle, M
    Lograsso, TA
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) : 7821 - 7823
  • [7] Microstructure and optical properties of nanocrystalline GaN embedded in silica matrix
    Qiu, HL
    Cao, CB
    Wang, DZ
    Zhu, HS
    MATERIALS CHEMISTRY AND PHYSICS, 2006, 96 (2-3) : 296 - 300
  • [8] Preparation and optical properties of nanocrystalline Ga0.62In0.38Sb embedded in SiO2 composite films
    Liu, FM
    Zhang, LD
    CHINESE PHYSICS LETTERS, 2000, 17 (02) : 142 - 144
  • [9] Enhancement of third-order nonlinearity of nanocrystalline GaSb embedded in silica film
    Liu, FM
    Zhang, LD
    Cheng, P
    Wang, P
    Zhang, WJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 76 (02): : 161 - 164
  • [10] High-performance room temperature 2.75 μm cutoff In0.22 Ga0.78 As0.19 Sb0.81 /Al 0.9 Ga 0.1 As0.08 Sb0.92 avalanche photodiode
    Jin, Xiao
    Zhao, Shouwei
    Craig, Adam p.
    Tian, Qingyu
    Gilder, Lindsay
    Yi, Xin
    Carmichael, M.
    Golding, T.
    Tan, Chee hing
    Marshall, Andrew r. j.
    David, John p. r.
    OPTICA, 2024, 11 (12): : 1632 - 1638
12345