Results of proton irradiations of large area strip detectors made on high-resistivity Czochralski silicon

被引：6
|
作者：
Luukka, P [1 ]
Härkönen, J
Tuovinen, E
Tuominen, E
Lassila-Perini, K
Mehtälä, P
Nummela, S
Nysten, J
Ungaro, D
Zibellini, A
Laitinen, P
Riihimäki, I
Virtanen, A
Furgeri, A
Hartmann, F
机构：
[1] CERN, EP, Helsinki Inst Phys, Geneva, Switzerland
[2] Univ Jyvaskyla, Accelerator Lab, Jyvaskyla, Finland
[3] Univ Karlsruhe, Karlsruhe, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 530卷 / 1-2期
关键词：
Si particle detectors; radiation hardness; material engineering;
D O I：
10.1016/j.nima.2004.05.058
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have processed full-size strip detectors on Czochralski grown silicon wafers with resistivity of about 1.2 kOmega cm. Wafers grown with Czochralski method intrinsically contain high concentrations of oxygen, and thus have potential for high radiation tolerance. Detectors and test diodes were irradiated with 10 MeV protons. The 1-MeV neutron equivalent irradiation doses were 1.6 x 10(14) and 8.5 x 10(13) cm(-2) for detectors, and up to 5.0 x 10(14) cm(-3) for test diodes. After irradiations, depletion voltages and leakage currents were measured. Czochralski silicon devices proved to be significantly more radiation hard than the reference devices made on traditional detector materials. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：117 / 121
页数：5
相关论文
共 50 条
  • [1] Particle detectors made of high-resistivity Czochralski silicon
    Härkönen, J
    Tuovinen, E
    Luukka, P
    Tuominen, E
    Li, Z
    Ivanov, A
    Verbitskaya, E
    Eremin, V
    Pirojenko, A
    Riihimaki, I
    Virtanen, A
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 541 (1-2): : 202 - 207
  • [2] Test beam results of a large area strip detector made on high resistivity Czochralski silicon
    Tuominen, E
    Banzuzi, K
    Czellar, S
    Heikkinen, A
    Härkönen, J
    Johansson, P
    Karimäki, V
    Luukka, P
    Mehtälä, P
    Niku, J
    Nummela, S
    Nysten, J
    Simpura, J
    Tuovinen, E
    Tuominiemi, J
    Ungaro, D
    Vaarala, T
    Wendland, L
    Voutilainen, M
    Zibellini, A
    [J]. NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS, 2003, 125 : 175 - 178
  • [3] Particle detectors made of high resistivity Czochralski grown silicon
    Harkonen, J.
    Tuovinen, E.
    Luukka, P.
    Tuominen, E.
    Lassila-Perini, K.
    Nysten, J.
    Li, Z.
    Eremin, V.
    Ivanov, A.
    Verbitskaya, E.
    Heikkila, P.
    Ovchinnikov, V.
    Yli-Koski, M.
    Laitinen, P.
    Riihimaki, I.
    Virtanen, A.
    [J]. PHYSICA SCRIPTA, 2004, T114 : 88 - 90
  • [4] EFFECT OF DEUTERON IRRADIATION ON RADIATION DETECTORS MADE OF HIGH-RESISTIVITY SILICON
    VERBITSKAYA, EM
    EREMIN, VE
    IVANOV, AM
    STROKAN, NB
    [J]. SEMICONDUCTORS, 1993, 27 (07) : 612 - 616
  • [5] MAGNETODIODES MADE OF HIGH-RESISTIVITY SILICON
    KARAKUSHAN, EI
    KOVARSKI.VY
    KOMAROVS.KF
    GAMOLIN, EI
    STAFEEV, VI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1453 - +
  • [6] Strip Detectors Processed on High-Resistivity 6-inch Diameter Magnetic Czochralski Silicon (MCz-Si) Substrates
    Wu, X.
    Harkonen, J.
    Kalliopuska, J.
    Tuominen, E.
    Maenpaa, T.
    Luukka, P.
    Tuovinen, E.
    Karadzhinova, A.
    Spiegel, L.
    Eranen, S.
    Oja, A.
    Haapalinna, A.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (01) : 611 - 618
  • [7] Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon
    Macchiolo, A.
    Borrello, L.
    Boscardin, M.
    Bruzzi, M.
    Creanza, D.
    Betta, G. -F. Dalla
    DePalma, M.
    Focardi, E.
    Manna, N.
    Menichelli, D.
    Messineo, A.
    Piemonte, C.
    Radicci, V.
    Ronchin, S.
    Scaringella, M.
    Segneri, G.
    Sentenac, D.
    Zorzi, N.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 573 (1-2): : 216 - 219
  • [8] FABRICATION OF DETECTORS AND TRANSISTORS ON HIGH-RESISTIVITY SILICON
    HOLLAND, S
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 275 (03): : 537 - 541
  • [9] Monolithic integration of detectors and transistors on high-resistivity silicon
    Betta, Gian-Franco Dalla
    Batignani, Giovanni
    Boscardin, Maurizio
    Bosisio, Luciano
    Gregori, Paolo
    Pancheri, Lucio
    Plemonte, Claudio
    Ratti, Lodovico
    Verzellesi, Giovanni
    Zorzi, Nicola
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 579 (02): : 658 - 663
  • [10] HIGH-RESISTIVITY SILICON SURFACE-BARRIER DETECTORS AS PROTON SPECTROMETERS ABOVE 15 MEV
    KLEMA, ED
    NOLEN, JA
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (04): : 560 - &
12345