Preparation and structural properties for GaN films grown on Si (111) by annealing

被引：54
|
作者：
Yang, YG [1 ]
Ma, HL
Xue, CS
Zhuang, HZ
Hao, XT
Ma, J
Teng, SY
机构：
[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China
[2] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China
[3] Shandong Normal Univ, Dept Phys, Jinan 250014, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2002年 / 193卷 / 1-4期
基金：
中国国家自然科学基金;
关键词：
gallium nitride films; annealing; r.f. magnetron sputtering;
D O I：
10.1016/S0169-4332(02)00490-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
High quality GaN films were prepared by annealing sputtered Ga2O3 films under flowing ammonia. Ga2O3 films were deposited on Si (1 1 1) substrates by r.f. magnetron sputtering. X-ray diffractorneter (XRD) and X-ray photoelectron spectroscopy (XPS) measurement results indicate that the polycrystalline GaN with hexagonal structure was successfully grown on, the Si (1 1 1) substrate. The surface morphology of the GaN films was examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Varying the annealing temperature and time was found to have great effect on the grain size. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：254 / 260
页数：7
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