Diode-pumped passively Q-switched Nd:GGG laser with a Bi-doped GaAs semiconductor saturable absorber

被引：9
|
作者：
Cong, Wen [1 ]
Li, Dechun [1 ]
Zhao, Shengzhi [1 ]
Yang, Kejian [1 ]
Li, Xiangyang [2 ]
Qiao, Hui [2 ]
Liu, Ji [1 ]
机构：
[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
来源：
OPTICS COMMUNICATIONS | 2014年 / 332卷
基金：
美国国家科学基金会;
关键词：
Solid-state lasers; Passive Q-switched; Semiconductor materials; Saturable absorbers; Nonlinear optics;
D O I：
10.1016/j.optcom.2014.07.035
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Passive Q-switching of a diode-pumped Nd:GGG laser is demonstrated using Bi-doped GaAs as saturable absorber. The Bi-doped GaAs wafer is fabricated by ion implantation and subsequent annealing. Compared with the Q-switched laser by undoped GaAs semiconductor saturable absorber, the laser with Bi-doped GaAs as saturable absorber can produce higher output power, shorter pulses, higher single pulse energies and higher peak powers. These results suggest that Bi-doped GaAs can be a promising new candidate of semiconductor saturable absorber in Q-switched laser. (C) 2014 Elsevier B.V. All rights reserved.
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页码：292 / 295
页数：4
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