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Localization of π-electron density in twisted bilayer graphene
被引:2
|作者:
Sedelnikova, Olga V.
[1
,2
]
Bulusheva, Lyubov G.
[1
,2
]
Okotrub, Alexander V.
[1
,2
]
机构:
[1] RAS, Nikolaev Inst Inorgan Chem SB, 3 Acad Lavrentiev Av, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, 2 Pirogov Str, Novosibirsk 630090, Russia
来源:
基金:
俄罗斯基础研究基金会;
关键词:
bilayer graphene;
electronic structure;
density functional theory;
electron density;
VAN-HOVE SINGULARITIES;
OPTICAL CONDUCTIVITY;
D O I:
10.1002/pssr.201600367
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
In bilayer graphene, mutual rotation of layers has strong effect on the electronic structure. We theoretically study the distribution of electron density in twisted bilayer graphene with the rotation angle of 21.8 degrees and find that regions with AA-like and AB-like stacking patterns separately contribute to the interlayer low-energy van Hove singularities. In order to investigate the peculiarities of interlayer coupling, the charge density map between the layers is examined. The presented results reveal localization of p-electrons between carbon atoms belonging to different graphene layers when they have AA-like stacking environment, while the interlayer coupling is stronger within AB-stacked regions. [GRAPHICS] Charge density map for bilayer graphene with a layer twist of 21.8 degrees(interlayer region). (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页数:4
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