Resistive switching in diamondoid thin films

被引：2
|
作者：
Jantayod, A. [1 ,2 ]
Doonyapisut, D. [2 ]
Eknapakul, T. [2 ]
Smith, M. F. [2 ]
Meevasana, W. [2 ,3 ,4 ]
机构：
[1] Naresuan Univ, Dept Phys, Fac Sci, Phitsanulok 65000, Thailand
[2] Suranaree Univ Technol, Sch Phys, Nakhon Ratchasima 30000, Thailand
[3] Suranaree Univ Technol, Ctr Excellence Adv Funct Mat, Nakhon Ratchasima 30000, Thailand
[4] MHESI, Thailand Ctr Excellence Phys ThEP, Bangkok 10400, Thailand
来源：
SCIENTIFIC REPORTS | 2020年 / 10卷 / 01期
关键词：
MEMORY; MONOLAYERS;
D O I：
10.1038/s41598-020-76093-3
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through I(0) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.
引用
收藏
页数：12
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