Analysis of energy levels of InAs/GaAs self-assembled quantum dots by using C-V and deep level transient spectroscopy

被引：0
|
作者：
Kim, Jin Soak [1 ,2 ]
Kim, Eun Kyu [1 ,2 ]
Kim, Jun Oh [3 ]
Lee, Sang Jun [3 ]
Noh, Sam Kyu [3 ]
机构：
[1] Hanyang Univ, Dept Phys, Seoul 133791, South Korea
[2] Hanyang Univ, Quantum Funct Spin Lab, Seoul 133791, South Korea
[3] Korea Res Inst Stand & Sci, Taejon 305600, South Korea
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 04期
关键词：
GAAS;
D O I：
10.1002/pssb.200880628
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Energy levels of InAs/GaAs self-assembled quantum dot (QD) system were analyzed by capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) methods. The QD signals were partially separated by DLTS measurement with small bias changing. The activation energies of AD signals were varied from 66 meV to 610 meV by changing of 0.6 V applied bias, which energies are related to the confined energy levels of InAs QDs. Then the ground states of InAs QDs were considered to be located 0.61 eV below the conduction band edge of GaAs barrier. In addition, it showed that DLTS signal of QDs are largely affected by their density of energy state. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：808 / 811
页数：4
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