Nonlinear I-V characteristics of doped SnO2

被引：17
|
作者：
Dhage, SR
Choube, V
Ravi, V [1 ]
机构：
[1] Natl Chem Lab, Phys & Mat Chem Div, Pune 411008, Maharashtra, India
[2] Natl Chem Lab, Catalysis Div, Pune 411008, Maharashtra, India
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 110卷 / 02期
关键词：
ceramics; electron microscopy; diffraction; electrical measurements; Schottky barrier; doping effects;
D O I：
10.1016/j.mseb.2004.02.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
When tin oxide is doped with Sb2O3 and CoO, it shows highly nonlinear current (I)-voltage (V) characteristics. Addition of CoO leads to creation of oxygen vacancies and helps in sintering of SnO2. Antimony oxide acts as a. donor and increases the conductivity. The results are nearly same when antimony oxide is replaced by tantalum oxide. The grain size of these sintered ceramics varies from 5 to 7 mum and the grain boundary barrier height (Phi(B)) is in the range of 0.5 eV. The observed nonlinear coefficient (alpha) is 25 and 27 for antimony and tantalum oxide, respectively and the breakdown field is in the range of 1250 V cm(-1). (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：168 / 171
页数：4
相关论文
共 50 条
  • [11] Nonlinear I-V characteristics of polymer nanocomposites
    Herth, Simone
    Nanofair 2006 New Ideas for Industry, 2006, 1940 : 55 - 55
  • [12] Nonlinear I-V characteristics of a mesoscopic conductor
    Wang, BG
    Wang, J
    Guo, H
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) : 5094 - 5102
  • [13] The role of interface states and series resistance on the I-V and C-V characteristics in Al/SnO2/p-Si Schottky diodes
    Altindal, S
    Karadeniz, S
    Tugluoglu, N
    Tataroglu, A
    SOLID-STATE ELECTRONICS, 2003, 47 (10) : 1847 - 1854
  • [14] CONSTRUCTION OF SnO2/SiO2/Si HETEROJUNCTION AND ITS LINEUP USING I-V AND C-V MEASUREMENTS
    Salem, Evan T.
    Agool, Ibrahim R.
    Hassan, Marwa A.
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2011, 25 (29): : 3863 - 3869
  • [15] Study on the nonlinear I-V characteristics of tungsten trioxide ceramics
    Hua, Zhong-Qiu
    Wang, Hai-Qing
    Zhao, Hong-Wang
    Dong, Liang
    Wang, Yu
    Gongneng Cailiao/Journal of Functional Materials, 2010, 41 (08): : 1343 - 1346
  • [16] NATURE OF DONOR STATES IN V-DOPED SNO2
    EGDELL, RG
    GULINO, A
    RAYDEN, C
    PEACOCK, G
    COX, PA
    JOURNAL OF MATERIALS CHEMISTRY, 1995, 5 (03) : 499 - 504
  • [17] Ferromagnetic V-doped SnO2 thin films
    Hong, NH
    Sakai, J
    PHYSICA B-CONDENSED MATTER, 2005, 358 (1-4) : 265 - 268
  • [18] Gating effect in the I-V characteristics of iodine doped polyacetylene nanofibers
    Park, JG
    Kim, GT
    Krstic, V
    Lee, SH
    Kim, B
    Roth, S
    Burghard, M
    Park, YW
    SYNTHETIC METALS, 2001, 119 (1-3) : 469 - 470
  • [19] Pulsed I-V for nonlinear modeling
    Dunleavy, L
    Clausen, W
    Weller, T
    MICROWAVE JOURNAL, 2003, 46 (03) : 68 - +
  • [20] ELECTROLESS DEPOSITION OF SNO2 AND ANTIMONY DOPED SNO2 FILMS
    RAVIENDRA, D
    SHARMA, JK
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (08) : 945 - 950
12345