A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position

被引：0

作者：

Tisseur, R. ^{[1
]}

Guerrieri, S. Donati ^{[1
]}

Bonani, F. ^{[1
]}

Ghione, G. ^{[1
]}

Benvenuti, A. ^{[2
]}

Ghetti, A. ^{[2
]}

机构：

[1] Politecn Torino, Dipartimento Elettron & Telecomunicaz, Corso Duca Abruzzi 24, I-10129 Turin, Italy

[2] Proc R&D, Micron Technol Inc, I-20864 Agrate Brianza, Italy

来源：

2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2013年

关键词：

SIMULATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper is aimed at exploring efficient approaches for the simulation of Random Telegraph Noise (RTN) in variability analysis of advanced floating gate non-volatile memories. RTN is traced back to randomly occupied localized traps located close to the Si/SiO2 interface. While the effect of traps has been investigated previously by means of time-consuming Monte Carlo simulations [1], in this work we try to exploit an efficient Green Function based analysis, akin to the one implemented in Synopsys SDevice for Random Doping Fluctuations (RDF) [2].

引用

页数：4

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