A Green's function approach to the analysis of non volatile memory device variability as a function of individual trap position

被引：0
|
作者：
Tisseur, R. [1 ]
Guerrieri, S. Donati [1 ]
Bonani, F. [1 ]
Ghione, G. [1 ]
Benvenuti, A. [2 ]
Ghetti, A. [2 ]
机构：
[1] Politecn Torino, Dipartimento Elettron & Telecomunicaz, Corso Duca Abruzzi 24, I-10129 Turin, Italy
[2] Proc R&D, Micron Technol Inc, I-20864 Agrate Brianza, Italy
来源：
2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2013年
关键词：
SIMULATION;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper is aimed at exploring efficient approaches for the simulation of Random Telegraph Noise (RTN) in variability analysis of advanced floating gate non-volatile memories. RTN is traced back to randomly occupied localized traps located close to the Si/SiO2 interface. While the effect of traps has been investigated previously by means of time-consuming Monte Carlo simulations [1], in this work we try to exploit an efficient Green Function based analysis, akin to the one implemented in Synopsys SDevice for Random Doping Fluctuations (RDF) [2].
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页数：4
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