High-performance p-channel LTPS-TFT using HfO2 gate dielectric and nitrogen ion implantation

被引：7

作者：

Ma, Ming-Wen ^{[1
]}

Chiang, Tsung-Yu ^{[2
]}

Chao, Tien-Sheng ^{[2
]}

Lei, Tan-Fu ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[2] Natl Chiao Tung Univ, Inst & Dept Electrophys, Hsinchu, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 07期

关键词：

THIN-FILM TRANSISTORS; POLYCRYSTALLINE SILICON FILMS; ELECTRICAL-PROPERTIES; POLYSILICON FILMS;

D O I：

10.1088/0268-1242/24/7/072001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this communication, a high-performance p-channel low-temperature poly-Si thin-film transistor with HfO2 gate dielectric and nitrogen ion implantation is demonstrated for the first time. A low threshold voltage V-TH = -0.8 V, excellent subthreshold swing S.S. = 0.123 V/decade, high field effect mobility mu(FE) = 64.14 cm(2) V-1 s(-1) and high driving current I-Dsat = 9.14 mu A mu m(-1) @ 3 V operation voltage of the p-channel LTPS-TFT can be achieved. The high performance characteristics are attributed to the very low effective oxide thickness EOT = 8.4 nm provided by the HfO2 gate dielectric and the passivation of effective interface states and grain boundary traps by the nitrogen ion implantation treatment. It would be very suitable for the application of a high-speed and low-power pixel-driving device in flat-panel displays.

引用

页数：4

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