Electronic and Magnetic Properties of The Graphene/RE/Ni(111) (RE: La, Yb) Intercalation-Like Interfaces: A DFT Analysis

被引:3
|
作者
Guo, Qilin [1 ]
Ovcharenko, Roman [2 ]
Paulus, Beate [3 ]
Dedkov, Yuriy [1 ,4 ]
Voloshina, Elena [1 ,3 ,4 ]
机构
[1] Shanghai Univ, Dept Phys, Shangda Rd 99, Shanghai 200444, Peoples R China
[2] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, Max Born Str 2A, D-12489 Berlin, Germany
[3] Free Univ Berlin, Inst Chem & Biochem, Arnimallee 22, D-14195 Berlin, Germany
[4] Ctr Excellence ENSEMBLE3 Spzoo, Wolczynska Str 133, PL-01919 Warsaw, Poland
基金
中国国家自然科学基金;
关键词
density functional theory calculations; electronic and magnetic properties; graphene-metal interfaces; near-edge X-ray absorption fine structure spectra simulations; SURFACE PHONON-DISPERSION; GRAPHITE MONOLAYER; GRAPHENE; NI(111); TEXTURE; METALS; CU;
D O I
10.1002/adts.202100621
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The effect of the rare-earth (RE) metals (La and Yb) intercalation on the electronic and magnetic properties of the graphene/Ni(111) interface is studied using state-of-the-art density functional theory calculations. In both systems, the intercalation of RE leads to the dramatic decrease of the magnetic moments of the Ni-interface atoms and to the negligible moments of C-atoms in a graphene layer, compared to the parent graphene/Ni(111) system. At the same time, the significant n-doping of graphene together with a band-gap opening is observed in both cases of the RE intercalation with a position of the graphene Dirac point reaching E-D - E-F approximate to -1.53 eV. Also the large density of states is found in the vicinity of the Fermi level (E-F) along the M - K direction for the graphene-derived pi states which can be attributed to the joint effect of the intercalated RE and interface Ni atoms. These factors - increased density of states at E-F and absence of magnetism of C-atoms in a graphene layer - indicate the possibility of the observation of the superconductive state in graphene in the considered RE-based systems, which is important for the understanding of these and other electronics effects in the graphene-based systems.
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页数:8
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