Synaptic Devices Based on 3-D AND Flash Memory Architecture for Neuromorphic Computing

被引：14

作者：

Noh, Yoohyun ^{[1
,2
]}

Seo, Yungtak ^{[1
]}

Park, Byunggook ^{[1
]}

Lee, Jong-Ho ^{[1
]}

机构：

[1] Seoul Natl Univ, ISRC, Dept Elect & Comp Engn, Seoul 154744, South Korea

[2] SK Hynix Inc, R&D Div, Icheon 467701, Gyeongki, South Korea

来源：

2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019) | 2019年

关键词：

AI; Neuromorphic; Synaptic device; 3D stackable; AND flash; NOR flash;

D O I：

10.1109/imw.2019.8739698

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new 3-D synaptic device with stackable AND-type Rounded Dual Channel (RDC) flash memory architecture is proposed for neuromorphic computing. The RDC flash devices operate at low power by using the FN program/erase method, utilizes a high speed by a parallel read operation, and performs in a high density with multi-layer stacking. Key fabrication steps are explained and the successful operation of the device in 3-D stacked structure is verified by device simulation. In addition, devices are fabricated by stacking three layers, and their operation is confirmed.

引用

页码：165 / 168

页数：4

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