Synaptic Devices Based on 3-D AND Flash Memory Architecture for Neuromorphic Computing

被引：14
|
作者：
Noh, Yoohyun [1 ,2 ]
Seo, Yungtak [1 ]
Park, Byunggook [1 ]
Lee, Jong-Ho [1 ]
机构：
[1] Seoul Natl Univ, ISRC, Dept Elect & Comp Engn, Seoul 154744, South Korea
[2] SK Hynix Inc, R&D Div, Icheon 467701, Gyeongki, South Korea
来源：
2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019) | 2019年
关键词：
AI; Neuromorphic; Synaptic device; 3D stackable; AND flash; NOR flash;
D O I：
10.1109/imw.2019.8739698
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new 3-D synaptic device with stackable AND-type Rounded Dual Channel (RDC) flash memory architecture is proposed for neuromorphic computing. The RDC flash devices operate at low power by using the FN program/erase method, utilizes a high speed by a parallel read operation, and performs in a high density with multi-layer stacking. Key fabrication steps are explained and the successful operation of the device in 3-D stacked structure is verified by device simulation. In addition, devices are fabricated by stacking three layers, and their operation is confirmed.
引用
收藏
页码：165 / 168
页数：4
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