Quasi-single-crystal (001) SrTiO3 templates on Si

被引:6
|
作者
Park, J. W. [1 ]
Baek, S. H. [1 ]
Bark, C. W. [1 ]
Biegalski, M. D. [2 ]
Eom, C. B. [1 ]
机构
[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[2] Ctr Nanophase Mat Sci, Oak Ridge Natl Lab, Oak Ridge, TN 37830 USA
基金
美国国家科学基金会;
关键词
annealing; buffer layers; elemental semiconductors; epitaxial layers; etching; molecular beam epitaxial growth; semiconductor-insulator boundaries; silicon; strontium compounds; surface morphology; THIN-FILMS; OXIDES;
D O I
10.1063/1.3202398
中图分类号
O59 [应用物理学];
学科分类号
摘要
The integration of multifunctional oxides on semiconductor devices requires the formation of single-crystal-like oxide templates directly on silicon. We report the fabrication of quasi-single-crystal (001) SrTiO3 templates on (001) Si by annealing 100 nm thick molecular beam epitaxy-grown epitaxial SrTiO3 films at 900 degrees C. The full width at half maximum of the (002) rocking curve is 0.006 degrees, which is much narrower than SrTiO3 bulk single crystals. An atomically smooth TiO2-terminated surface is obtained by buffered-HF etching, which allows us to create functional oxide heterointerfaces on Si. Epitaxial SrRuO3 thin films grown on the quasi-single-crystal SrTiO3 template exhibit a superior crystalline quality and surface morphology.
引用
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页数:3
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