Heavy ion radiation damage in double-sided silicon strip detectors

被引:3
|
作者
Livingston, K [1 ]
Woods, PJ [1 ]
Davinson, T [1 ]
Shotter, AC [1 ]
机构
[1] UNIV EDINBURGH,DEPT PHYS & ASTRON,EDINBURGH EH9 3JZ,MIDLOTHIAN,SCOTLAND
关键词
D O I
10.1016/0168-9002(95)00808-X
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A(252)Cf fission fragment source was used to produce heavy-ion radiation damage in a double-sided silicon strip detector. It was found that a good quality fission fragment spectrum (as determined by the peak to valley ration N-L/N-V) could not be achieved for radiation incident on the p(+) face of the detector. However, for radiation incident on the n(+) face, the ratio N-L/N-V remained adequate up to an accumulated dose of similar to 4 X 10(6) fragments mm(-2). For the measurement of alphas, typical resolution deteriorated from an initial 30 keV FWHM to 50 keV FWHM at a dose of similar to 8 X 10(6) fragments mm(-2) for radiation incident on the n(+) face, and similar to 6 X 10(6) for radiation incident on the p(+) face. The interstrip resistance in one region of the n(+) face broke down completely after a relatively small radiation doses incident on that face. Further investigation of this is still required.
引用
收藏
页码:445 / 451
页数:7
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