Gated carbon nanotube field emission enhancement and regeneration by hydrogen

被引:0
|
作者
Hsu, DSY [1 ]
Shaw, JL [1 ]
机构
[1] USN, Res Lab, Washington, DC 20375 USA
关键词
carbon nanotubes; field emission; field emitter arrays; gate apertures; hydrogen;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report large increases in field emission current when operating carbon nanotubes in substantial pressures of hydrogen, especially when the nanotubes were contaminated. We have previously demonstrated two different configurations of integrally gated carbon nanotube field emitter arrays (cNTFEAs), CNTs grown inside microfabricated gate apertures with and without silicon posts [ 1 -4]. Salient features of these in-situ grown microgated cNTFEAs include the absence of electrical arcing, low operating voltage, and enhancing effect of some residual ambient gases. Operating both configurations of cNTFEAs without special pre-cleaning in greater than 10(-5) Torr hydrogen produced orders of magnitude enhancement in emission. For a cNTFEA intentionally degraded by oxygen, the operation in hydrogen resulted in a 340-fold recovery in emission. The results suggested a dependence on atomic hydrogen produced from the interaction between emission electrons and molecular hydrogen. The observed emission enhancement could be due to removal of oxygen-containing surface species, a surface dipole formation, or hydrogen doping.
引用
收藏
页码:236 / 239
页数:4
相关论文
共 50 条
  • [31] Ionization gauge by carbon nanotube field emission
    In-Mook Choi
    Sam-Yong Woo
    Boo-Shik Kim
    Journal of Mechanical Science and Technology, 2005, 19 : 2127 - 2132
  • [32] Carbon nanotube field emission electron sources
    Dean, KA
    Chalamala, BR
    Coll, BF
    Xie, YWC
    Jaskie, JE
    NEW DIAMOND AND FRONTIER CARBON TECHNOLOGY, 2002, 12 (04): : 165 - 180
  • [33] Field emission from carbon nanotube mat
    Zhao, WJ
    Wasu, R
    Takai, M
    TECHNICAL DIGEST OF THE 16TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, 2003, : 57 - 58
  • [34] Field emission from carbon nanotube Mat
    Zhao, WJ
    Rochanachivapar, W
    Takai, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1315 - 1318
  • [35] Field emission microscopy of carbon nanotube caps
    Motorola, Inc., Flat Panel Display Division, 7700 South River Parkway, Tempe, AZ 85284, United States
    J Appl Phys, 7 (3832-3836):
  • [36] Improvement contact resistance and enhancement of carbon nanotube electron field emission by ball milling process
    Chen, Lei-Feng
    Song, Hang
    Jiang, Hong
    Zhao, Hai-Feng
    Li, Zhi-Ming
    Li, Da-Bing
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2010, 39 (01): : 44 - 47
  • [37] Enhancement of field emission characteristics of tungsten emitters by single-walled carbon nanotube modification
    Ferrer, D
    Tanii, T
    Matsuya, I
    Zhong, G
    Okamoto, S
    Kawarada, H
    Shinada, T
    Ohdomari, I
    APPLIED PHYSICS LETTERS, 2006, 88 (03) : 1 - 3
  • [38] Polymer gated carbon nanotube field effect transistors.
    Liu, J
    Lu, CG
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2004, 227 : U508 - U508
  • [39] Transparent carbon nanotube field emission devices for field emission display and lamp
    Cho, Yousuk
    Lee, Semin
    Park, Heeyong
    Lee, Sunhee
    An, Myungchan
    Jeong, Se Young
    Kim, Dojin
    IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2006, : 1233 - 1234
  • [40] Soluble carbon nanotube films treated using a hydrogen plasma for uniform electron field emission
    Yu, K
    Zhu, ZQ
    Xu, M
    Li, Q
    Lu, W
    Chen, Q
    SURFACE & COATINGS TECHNOLOGY, 2004, 179 (01): : 63 - 69