Hopping conduction in the Zn doped Pr(123) system

被引：0
|
作者：
Ata-Allah, SS [1 ]
机构：
[1] Atom Energy Author, Nucl Res Ctr, Reactor & Neutron Phys Dept, Cairo, Egypt
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2000年 / 177卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-396X(200001)177:1<251::AID-PSSA251>3.0.CO;2-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A series of PrBa2Cu3-xZnxO7-y samples with 0 less than or equal to x less than or equal to 1.0 has been prepared. X-ray powder diffraction results show the presence of a single-phase orthorhombic structure for all the studied samples. The electrical resistivity of PrBa2Cu3-xZnxO7-y samples is found to increase with increasing Zn concentration. The results are interpreted in terms of hopping conductivity (both nearest-neighbor-hopping and variable-range-hopping) for doped semiconductors.
引用
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页码：251 / 261
页数：11
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