Linear arrays of uncooled poly SiGe microbolometers for IR detection

被引：7
|
作者：
De Moor, P [1 ]
Sedky, S [1 ]
Sabuncuoglu, D [1 ]
Van Hoof, C [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
MICROMACHINED DEVICES AND COMPONENTS V | 1999年 / 3876卷
关键词：
IR detection; uncooled bolometers; surface micromachining;
D O I：
10.1117/12.360502
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
In this work we demonstrate the advantages of using polycrystalline silicon germanium (poly SiGe) as a structural material for surface micromachined devices, and more specifically uncooled Infra-Red (IR) microbolometers. The low stress and the low thermal conductivity of poly SiGe enable the realization of IR microbolometers having an effective detectivity above 2x10(9) cm.Hz(1/2)/W. Currently, linear arrays of optimized devices included in an on-chip vacuum package are developed. The vapor HF sacrificial etching technique is used to release extremely thin microbolometers with high yield. Combined with the practical advantage of an uncooled system, a low-cost yet sensitive sensor system is the result. Possible applications include space based pushbroom earth sensing, spectral environmental monitoring and process control.
引用
收藏
页码：256 / 259
页数：4
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