Growth of ferroelectric BLT and Pt nanotubes for semiconductor memories

被引：3
|
作者：
Seo, B. I.
Shaislamov, U. A.
Lee, S. J.
Kim, Sang-Woo
Kim, I. S.
Hong, S. K.
Yang, Beelyong
机构：
[1] Kumoh Natl Inst Technol, Dept Mat Sci & Engn, Gumi 730701, Gyeongbuk, South Korea
[2] Hynix Semicond Inc, Memory R&D Div, New Device Team, Icheon Si 467701, Kyoungki Do, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 292卷 / 02期
关键词：
anodization; Blt; nanotube; porous alumina; Pt; ferroelectric;
D O I：
10.1016/j.jcrysgro.2006.04.078
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Demands of ferroelectric high-density memories using the integrated cells of significantly reduced size are expected to increase tremendously in upcoming ubiquitous era. Thus we suggest fabrication of three dimensional (3D) nanotube capacitors for high-density semiconductor memories. In this study fabrication of Bi3.25La0.75Ti3O12 (BLT) and Pt nanotubes for application in ferroelectric nanotube capacitors were investigated. BLT and Pt nanotubes were fabricated by wetting of porous alumina templates using polymeric metallic sources. Crystallization and nucleation of the nanotubes were analyzed by X-ray diffractometer and field emission-scanning electron microscope techniques. Rapid thermal and furnace annealing effects on nucleation and growth of BLT and Pt nanotubes were discussed. (c) 2006 Elsevier B.V. All rights reserved.
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页码：315 / 319
页数：5
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