The structure of copper-doped amorphous hydrogenated carbon films
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作者:
Vasilevskaya, TN
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Russian Acad Sci, IV Grebenshchikov Silicate Chem Inst, St Petersburg 199155, RussiaRussian Acad Sci, IV Grebenshchikov Silicate Chem Inst, St Petersburg 199155, Russia
Vasilevskaya, TN
[1
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Andreev, NS
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机构:Russian Acad Sci, IV Grebenshchikov Silicate Chem Inst, St Petersburg 199155, Russia
Andreev, NS
Drozdova, IA
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机构:Russian Acad Sci, IV Grebenshchikov Silicate Chem Inst, St Petersburg 199155, Russia
Drozdova, IA
Filipovich, VN
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机构:Russian Acad Sci, IV Grebenshchikov Silicate Chem Inst, St Petersburg 199155, Russia
Filipovich, VN
Yastrebov, SG
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机构:Russian Acad Sci, IV Grebenshchikov Silicate Chem Inst, St Petersburg 199155, Russia
Yastrebov, SG
Zvonareva, TK
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机构:Russian Acad Sci, IV Grebenshchikov Silicate Chem Inst, St Petersburg 199155, Russia
Zvonareva, TK
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[1] Russian Acad Sci, IV Grebenshchikov Silicate Chem Inst, St Petersburg 199155, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
A study of the nanostructure of a-C:H:Cu films by x-ray small-angle scattering, x-ray diffraction, TEM, and visible and UV spectroscopy is reported. It has been established that introduction of 9-16 at. % Cu not only decorates the original carbon fragments but produces extended (up to 4 mu m in length) formations of copper-decorated strongly elongated ellipses as well. At 14-16 at. % Cu, these linear clusters represent copper nanotubes with a core made up of the original ellipses drawn in a line. It is these conducting copper formations that account primarily for the strong increase in conductivity at 12-16 at. % Cu contents in a-C:H films. (C) 1999 American Institute of Physics. [S1063- 7834(99)03711-9].
机构:
Tokyo Inst Technol, Dept Mech Eng, 2-12-1 Ookayama,Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Mech Eng, 2-12-1 Ookayama,Meguro Ku, Tokyo 1528552, Japan
Umada, Naoki
Kanda, Kazuhiro
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Univ Hyogo, LASTI, 3-1-2 Koto, Ako, Hyogo 6781205, JapanTokyo Inst Technol, Dept Mech Eng, 2-12-1 Ookayama,Meguro Ku, Tokyo 1528552, Japan
Kanda, Kazuhiro
Niibe, Masato
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Univ Hyogo, LASTI, 3-1-2 Koto, Ako, Hyogo 6781205, Japan
Univ Tokyo, Inst Solid State Phys ISSP, 5-1-5 Kashiwanoha, Kashiwa, Chiba 2278581, JapanTokyo Inst Technol, Dept Mech Eng, 2-12-1 Ookayama,Meguro Ku, Tokyo 1528552, Japan
机构:
Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22452900 Rio De Janeiro, BrazilPontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22452900 Rio De Janeiro, Brazil
Freire, Fernando L., Jr.
CARBON: THE FUTURE MATERIAL FOR ADVANCED TECHNOLOGY APPLICATIONS,
2006,
100
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238
机构:
National Microelectronics Research Centre, University College, Lee Maltings, Cork, IrelandSurface Engineering Group, Materials Technology Department, Enterprise Ireland, Glasnevin, Dublin 9, Ireland