Interfacial electronic states of an anthracene derivative deposited on a SiO2/Si substrate

被引：3
|
作者：
Sasaki, Hiroyuki
Wakayama, Yutaka
Chikyow, Toyohiro
Imamura, Masaki
Tanaka, Akinori
Kobayashi, Kenji
机构：
[1] NIMS, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan
[2] JST, JCORP, Nanoscale Quantum Conductor Array Project, Tsukuba, Ibaraki 3050044, Japan
[3] Kobe Univ, Grad Sch Sci & Technol, Nada Ku, Kobe, Hyogo 6578501, Japan
[4] Kobe Univ, Dept Mech Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
[5] Shizuoka Univ, Dept Chem, Shizuoka 4228529, Japan
来源：
SOLID STATE COMMUNICATIONS | 2006年 / 139卷 / 04期
关键词：
surfaces and interfaces; organic semiconductors; electronic states; photoelectron spectroscopies;
D O I：
10.1016/j.ssc.2006.05.039
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO2/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/SiO2 interface and decreases the effective work function. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：153 / 156
页数：4
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