Properties of Cu Doped NiO Transparent Oxide Thin Films by Sol-Gel Solution

被引：0
|
作者：
Takahashi, Chiaki [1 ]
Kawamura, Midori [1 ]
Abe, Yoshio [1 ]
Kim, Kyung Ho [1 ]
机构：
[1] Kitami Inst Technol, 165 Koen Cho, Kitami, Hokkaido 0908507, Japan
来源：
IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1 | 2012年 / 19卷
基金：
日本学术振兴会;
关键词：
NiO; Cu; Annealing temperature; Dopant; Sol-gel; ELECTROCHROMIC PROPERTIES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wide band-gap oxide semiconductor nickel oxide thin films were prepared by sol-gel spin-coating under various annealing temperatures from 250 to 450 degrees C and Cu doping amounts from 0 to 20 at.%. The optical and structural properties of these films significantly depend on the temperature and the Cu doping amount.
引用
收藏
页码：539 / 542
页数：4
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