Formation and properties of silicon/silicide/oxide nanochains

被引：0

作者：

Kohno, H ^{[1
]}

Ohno, Y ^{[1
]}

Ichikawa, S ^{[1
]}

Akita, T ^{[1
]}

Tanaka, K ^{[1
]}

Takeda, S ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan

来源：

QUANTUM DOTS, NANOPARTICLES AND NANOWIRES | 2004年 / 789卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon/silicide/oxide nanochains, which have an alternate arrangement of silicon/copper silicide composite nanoparticles and oxide nanowires, were fabricated using silicon/oxide nanochains as templates. Photoluminescence was observed at room temperature and considered to be due to recombination of excitons in oxide. Electrostatic potential in the material was also investigated by electron holography. No visible potential bending at the silicon/silicide interface was detected.

引用

页码：257 / 262

页数：6

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