NAND Flash Memory With Multiple Page Sizes for High-Performance Storage Devices

被引:7
|
作者
Kim, Jin-Young [1 ,2 ]
Park, Sang-Hoon [3 ]
Seo, Hyeokjun [3 ]
Song, Ki-Whan [1 ]
Yoon, Sungroh [4 ]
Chung, Eui-Young [3 ]
机构
[1] Samsung Elect Co Ltd, Suwon 443742, South Korea
[2] Yonsei Univ, Seoul 120749, South Korea
[3] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[4] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 151744, South Korea
基金
新加坡国家研究基金会;
关键词
Multiple page sizes; NAND flash memory (NFM); SCHEME; DESIGN;
D O I
10.1109/TVLSI.2015.2409055
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In recent years, the demand for NAND flash-based storage devices has rapidly increased because of the popularization of various portable devices. NAND flash memory (NFM) offers many advantages, such as nonvolatility, high performance, the small form factor, and low-power consumption, while achieving high chip integration with a specialized architecture for bulk data access. A unit of NFM's read and program operations, the page, has continuously grown. Although increasing page size reduces costs, it adversely affects performance because of the resultant side effects, such as fragmentation and wasted space, caused by the incongruity of data and page sizes. To address this issue, we propose a multiple-page-size NFM architecture and its management. Our method dramatically improves write performance through adopting multiple page sizes without requiring additional area overhead or manufacturing processes. Based on the experimental results, the proposed NFM improves write latency and NFM lifetime by up to 65% and 62%, respectively, compared with the single-page-size NFM.
引用
收藏
页码:764 / 768
页数:5
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